深圳市英尚微电子有限公司
everspin代理MR256DL08BMA45R集成电路
产品属性
- Density:
- 256Kb
- Org.:
- 32Kx8
- Pkg. :
- 48-BGA
- MOQ(pcs) / Tray:
- 2000
- MOQ(pcs)/ T&R:
- 696
- 品牌:
- 其他
- 封装形式:
- BGA
- 类型:
- 数字集成电路
- 用途:
- 电脑
- 功能:
- 存储器
- 导电类型:
- 双极型
- 封装外形:
- 扁平型
- 集成度:
- 大规模(100~10000)
- 加工定制:
- 是
- 型号:
- MR256DL08BMA45R
- 批号:
- 18+
- 工作电源电压:
- 2.7-3.6v
- 最大功率:
- 具体参照规格书
- 工作温度:
- 具体参照规格书
- 外形尺寸:
- 具体参照规格书
<*n style="font-size:16px;">英尚微电子总代理NETSOL存储器sram|everspin存储器MRAM|jsc济州半导体|ISSI芯成|CYPRESS赛普拉斯ISSI存储芯片，SRAM,DRAM,各类存储器memory芯片ic,*代理，库存现货。
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<*n style="font-size:16px;">FEATURES
<*n style="font-size:16px;">· 3.3 Volt VDD power supply with a range of 2.7V to 3.6V
<*n style="color:#333333;font-family:"font-size:16px;background-color:#FFFFFF;">· <*n style="font-size:16px;">I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces
<*n style="color:#333333;font-family:"font-size:16px;background-color:#FFFFFF;">· <*n style="font-size:16px;">Fast 45 ns read/write cycle
<*n style="color:#333333;font-family:"font-size:16px;background-color:#FFFFFF;">· <*n style="font-size:16px;">SRAM compatible timing
<*n style="color:#333333;font-family:"font-size:16px;background-color:#FFFFFF;">· <*n style="font-size:16px;">Unlimited read & write endurance
<*n style="color:#333333;font-family:"font-size:16px;background-color:#FFFFFF;">· <*n style="font-size:16px;">Data always non-volatile for >20-years at temperature
<*n style="color:#333333;font-family:"font-size:16px;background-color:#FFFFFF;">· <*n style="font-size:16px;">All product*eet MSL-3 moisture sensitivity level
<*n style="color:#333333;font-family:"font-size:16px;background-color:#FFFFFF;">· <*n style="font-size:16px;">RoHS-compliant *all footprint BGA package
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<*n>I*ODUCTION
<*n>The MR256DL08B is a 262,144-bit magnetoresistive random acces*emory (MRAM) device organized as 32,768 wo* of 8 bits. It supports I/O voltages from +1.65 to +3.6 volts. The MR256DL08B offers SRAM compatible 45ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR256DL08B is the ideal memory solution for applicati* that must permanently store and retrieve critical data and programs quickly.
<*n>The MR256DL08B is *ailable in *all footprint 8 mm x 8 mm, 48-pin ball grid array (BGA) package with 0.75 mm ball centers.
<*n>The MR256DL08B provides highly reliable data storage over a wide range of temperatures. The product is offered with commercial temperature (0 to +70 °C).
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