英尚微电子总代理NETSOL存储器sram|everspin存储器MRAM|jsc济州半导体|ISSI芯成|CYPRESS赛普拉斯ISSI存储芯片，SRAM,DRAM,各类存储器memory芯片ic,*代理，库存现货。

FEATURES

· +3.3 Volt power supply

· I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces

· Fast 45 ns read/write cycle

· SRAM compatible timing

· Unlimited read & write endurance

· Data always non-volatile for >20-years at temperature

· RoHS-compliant *all footprint BGA package

I*ODUCTION

The MR256D08B is a 262,144-bit magnetoresistive random acces*emory (MRAM) device organized as 32,768 wo* of 8 bits. It supports I/O voltages from +1.65 to +3.6 volts. The MR256D08B offers SRAM compatible 45ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR256D08B is the ideal memory solution for applicati* that must permanently store and retrieve critical data and programs quickly.

The MR256D08B is *ailable in *all footprint 8 mm x 8 mm, 48-pin ball grid array (BGA) package with 0.75 mm ball centers.