深圳市英尚微电子有限公司
MR0DL08BMA45R非易失性磁性随机存取存储器mram
产品属性
- Density:
- 1Mb
- Org.:
- 128Kx8
- Pkg. :
- 48-BGA
- MOQ(pcs) / Tray:
- 2000
- MOQ(pcs)/ T&R:
- 696
- 品牌:
- 其他
- 封装形式:
- BGA
- 类型:
- 数字集成电路
- 用途:
- 电脑
- 功能:
- 存储器
- 导电类型:
- 双极型
- 封装外形:
- 扁平型
- 集成度:
- 大规模(100~10000)
- 加工定制:
- 是
- 型号:
- MR0DL08BMA45R
- 批号:
- 18+
- 工作电源电压:
- 2.7-3.6v
- 最大功率:
- 具体参照规格书
- 工作温度:
- 具体参照规格书
- 外形尺寸:
- 具体参照规格书
英尚微电子总代理NETSOL存储器sram|everspin存储器MRAM|jsc济州半导体|ISSI芯成|CYPRESS赛普拉斯ISSI存储芯片，SRAM,DRAM,各类存储器memory芯片ic,*代理，库存现货。
| Density | Org. | Voltage | Part Number | Temp | Pkg. |
| 1Mb | 128Kx8 | 2.7VDD min, 1.8VDDQ | MR0DL08BMA45 | Commercial | 48-BGA |
| 1Mb | 128Kx8 | 2.7-3.6v | MR0DL08BMA45R | Commercial | 48-BGA |
I*ODUCTION
The MR0DL08B is a dual power supply1,048,576-bit magnetoresistive random acces*emory (MRAM) device organized as131,072 wo* of 8 bits. It supports I/O voltages from +1.65 to +3.6 volts. TheMR0DL08B offers SRAM compatible 45ns read/write timing with unlimitedendurance. Data is always non-volatile for greater than 20-years. Data isautomatically protected on power loss by low-voltage inhibit circuitry toprevent writes with voltage out of specification. The MR0DL08B is the idealmemory solution for applicati* that must permanently store and retrievecritical data and programs quickly.
The MR0DL08B is *ailable in *allfootprint 8 mm x 8 mm, 48-pin ball grid array (BGA) package with 0.75 mm ballcenters.
The MR0DL08B provides highly reliable datastorage over a wide range of temperatures. The product is offered withcommercial temperature (0 to +70 °C).
