深圳市英尚微电子有限公司

主营:集成电路、电子元器件、存储器

everspin代理MR0A08BYS35R集成电路芯片

面议 中国 广东 深圳 宝安区

产品属性

Density:
1Mb
Org.:
128Kx8
Pkg. :
44-TSOP2
MOQ(pcs) / Tray:
1500
MOQ(pcs)/ T&R:
270
品牌:
其他
封装形式:
TSOP
类型:
数字集成电路
用途:
电脑
功能:
存储器
导电类型:
双极型
封装外形:
扁平型
集成度:
大规模(100~10000)
加工定制:
型号:
MR0A08BYS35R
批号:
18+
工作电源电压:
3.3V
最大功率:
具体参照规格书
工作温度:
具体参照规格书
外形尺寸:
具体参照规格书

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I*ODUCTION

The MR0A08B is a 1,048,576-bitmagnetoresistive random acces*emory (MRAM) device organized as 131,072 wo*of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing withunlimited endurance.

Data is always non-volatile for greaterthan 20-years. Data is automatically protected on power loss by low-voltage inhibitcircuitry to prevent writes with voltage out of specification.

The MR0A08B is the ideal memory solutionfor applicati* that must permanently store and retrieve critical data andprograms quickly.

The MR0A08B is *ailable in *all footprint400-mil, 44-lead plastic *all-outline TSOP type-2 package, 8 mm x 8 mm, or a48-pin ball grid array (BGA) package with 0.75 mm ball centers. (The 32-SOICpackage opti* is obsolete and no longer *ailable for new orders.)

These packages are compatible with similarlow-power SRAM products and other non-volatile RAM products.

The MR0A08B provides highly reliable datastorage over a wide range of temperatures. The product is offered withcommercial temperature range (0 to +70 °C) and industrial temperature range (-40to +85 °C).




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