英尚微电子总代理NETSOL存储器sram|everspin存储器MRAM|jsc济州半导体|ISSI芯成|CYPRESS赛普拉斯ISSI存储芯片，SRAM,DRAM,各类存储器memory芯片ic,*代理，库存现货。

I*ODUCTION

The MR0A16A is a 1,048,576-bitmagnetoresistive random acces*emory (MRAM) device organized as 65,536 wo*of 16 bits. The MR0A16A offers SRAM compatible 35 ns read/write timing withunlimited endurance.

Data is always non-volatile for greaterthan 20 years. Data is automatically protected on power loss by low-voltageinhibit circuitry to prevent writes with voltage out of specification.

MR0A16A is the ideal memory solution forapplicati* that must permanently store and retrieve critical data andprograms quickly.

The MR0A16B is *ailable in a *allfootprint 48-pin ball grid array (BGA) package and a 44-pin thin *all outlinepackage (TSOP Type 2). These packages are compatible with similar low-powerSRAM products and other nonvolatile RAM products.

TheMR0A16A provides highly reliable data storage over a wide range oftemperatures. The product is *ailable with commercial temperature (0 to +70°C), industrial temperature (-40 to +85 °C), extended temperature (-40 to +105°C), and Automotive AEC-Q100 Grade 1 (-40 to +125°) temperature range opti*.