深圳市英尚微电子有限公司
EVERSPIN代理商MR2A08AMYS35R并口MRAM
产品属性
- Density:
- 4Mb
- Org.:
- 512Kx8
- Pkg. :
- 44-TSOP2
- MOQ(pcs) / Tray:
- 1500
- MOQ(pcs)/ T&R:
- 270
- 品牌:
- 其他
- 封装形式:
- TSOP
- 类型:
- 数字集成电路
- 用途:
- 军工
- 功能:
- 存储器
- 导电类型:
- 双极型
- 封装外形:
- 扁平型
- 集成度:
- 大规模(100~10000)
- 加工定制:
- 是
- 型号:
- MR2A08AMYS35R
- 批号:
- 18+
- 工作电源电压:
- 3.3V
- 最大功率:
- 具体参照规格书
- 工作温度:
- 具体参照规格书
- 外形尺寸:
- 具体参照规格书
英尚微电子总代理NETSOL存储器sram|everspin存储器MRAM|jsc济州半导体|ISSI芯成|CYPRESS赛普拉斯ISSI存储芯片，SRAM,DRAM,各类存储器memory芯片ic,*代理，库存现货。
I*ODUCTION
The MR2A08A is a 4,194,304-bitmagnetoresistive random acces*emory (MRAM) device organized as 524,288 wo*of 8 bits. The MR2A08A offers SRAM compatible 35ns read/write timing withunlimited endurance. Data is always non-volatile for greater than 20 years.Data is automatically protected on power loss by low-voltage inhibit circuitryto prevent writes with voltage out of specification.
The MR2A08A is the ideal memory solutionfor applicati* that must permanently store and retrieve critical data andprograms quickly.
The MR2A08A is *ailable in a *allfootprint 400-mil, 44-lead plastic *all-outline TSOP type 2 package or an 8 mmx 8 mm, 48-pin ball grid array (BGA) package with 0.75 mm ball centers. Thesepackages are compatible with similar low-power SRAM products and othernon-volatile RAM products.
The MR2A08A provides highly reliable datastorage over a wide range of temperatures. The product is offered withcommercial temperature range (0 to +70 °C), industrial temperature range (-40to +85 °C), and AEC-Q100 Grade 1 temperature range (-40 to +125 °C) opti*.
