深圳市英尚微电子有限公司
MRAM芯片MR2A16AMYS35集成电路芯片
产品属性
- Density:
- 4Mb
- Org.:
- 256Kx16
- Pkg. :
- 44-TSOP
- MOQ(pcs) / Tray:
- 270
- MOQ(pcs)/ T&R:
- 1500
- 品牌:
- 其他
- 封装形式:
- TSOP
- 类型:
- 数字集成电路
- 用途:
- 音频
- 功能:
- 存储器
- 导电类型:
- 双极型
- 封装外形:
- 扁平型
- 集成度:
- 大规模(100~10000)
- 加工定制:
- 是
- 型号:
- MR2A16AMYS35
- 批号:
- 18+
- 工作电源电压:
- 3.3V
- 最大功率:
- 具体参照规格书
- 工作温度:
- 具体参照规格书
- 外形尺寸:
- 具体参照规格书
I*ODUCTION
The MR2A16A is a 4,194,304-bit magnetoresistiverandom acces*emory (MRAM) device orga- nized as 262,144 wo* of 16 bits. TheMR2A16A offers SRAM compatible 35 ns read/write timing with unlimitedendurance. Data is always non-volatile for greater than 20 years. Data isautomati- cally protected on power loss by low-voltage inhibit circuitry toprevent writes with voltage out of specification.
The MR2A16A is the ideal memory solutionfor applicati* that must permanently store and re- trieve critical data andprograms quickly.
The M2A16A is *ailable in a *allfootprint 48-pin ball grid array (BGA) package and a 44-pin thin *all outlinepackage (TSOP Type 2). These packages are compatible with similar low-powerSRAM products and other nonvolatile RAM products.
The MR2A16A provides highly reliable datastorage over a wide range of temperatures. The prod- uct is offered withCommercial (0 to +70 °C), Industrial (-40 to +85 °C), Extended (-40 to +105°C), and AEC-Q100 Grade 1 (-40 to +125 °C) operating temperature range opti*.
