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FEATURE
· Fast 35 ns Read/Write cycle
· SRAM compatible timing, uses existing SRAM co*ol-lers without redesign
· Unlimited Read & Write endurance
· Data non-volatile for >20 years at temperature
· One memory replaces Flash, SRAM, EEPROM and *SRAM in a system for simpler, more efficien*sign
· Replaces battery-backed SRAM soluti* with MRAM to improve reliability
· 3.3 volt power supply
· Automatic data protection on power loss
· Commercial, Industrial, Extended temperatures
· AEC-Q100 Grade 1 option
· All product*eet MSL-3 moisture sensitivity level
· RoHS-compliant SRAM TSOP2 and BGA Packages