•High-speed access time: 45ns, 55ns

•CMOS low power operation

–Operating (typical):

- 10.8mW (1.8V), 18mW (3.0V)

–CMOS Standby (typical):

- 48 µW (1.8V), 90 µW (3.0V)

•TTL compatible interface levels

•Single power supply

–1.65V—1.98V Vdd (62/65WV102416EALL)

–2.2V--3.6V Vdd (62/65WV102416EBLL)

•Data co*ol for upper and lower bytes

•Industrial and Automotive temperature support

The IS62WV102416EALL/BLL and

IS65WV102416EALL/BLL are Low Power, 16M bit

static RAMs organized as 1024K wo* by 16bits. It is

fabricated using 's high-performance CMOS

technology. This highly reliable proces*oupled with

innovative circui*sign techniques, yields highperformance

and low power c*umption devices.