GENERAL DESCRIPTION

The AP50N06 is the N-Channel logic enhancement mode power

field effect transistors are produced using high cell density DMOS

trench technology. This high density process is especially tailored to

minimizetate resistance. These devices are particularly suited

for low voltage applicatiuch as LCD inverter, computer power

management and DC to DC converter circuits which need low in-line

power loss.

FEATURES

● (ON)≦ mΩ@VGS=10V

● Super high density cell design for extremely low (ON)

● Exceptional on-resistance and maximum DC current

capability

TD

● Power Management

● DC/DC Converter

● LCD TV & Monitor Display inverter

● CCFL inverter

● Secondary Synchronous Rectification