everspin代理MR0A08BYS35R集成电路芯片

英尚微电子总代理NETSOL存储器sram|everspin存储器MRAM|jsc济州半导体|ISSI芯成|CYPRESS赛普拉斯ISSI存储芯片，SRAM,DRAM,各类存储器memory芯片ic,*代理，库存现货。

I*ODUCTION

The MR0A08B is a 1,048,576-bitmagnetoresistive random acces*emory (MRAM) device organized as 131,072 wo*of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing withunlimited endurance.

Data is always non-volatile for greaterthan 20-years. Data is automatically protected on power loss by low-voltage inhibitcircuitry to prevent writes with voltage out of specification.

The MR0A08B is the ideal memory solutionfor applicati* that must permanently store and retrieve critical data andprograms quickly.

The MR0A08B is *ailable in *all footprint400-mil, 44-lead plastic *all-outline TSOP type-2 package, 8 mm x 8 mm, or a48-pin ball grid array (BGA) package with 0.75 mm ball centers. (The 32-SOICpackage opti* is obsolete and no longer *ailable for new orders.)

These packages are compatible with similarlow-power SRAM products and other non-volatile RAM products.

The MR0A08B provides highly reliable datastorage over a wide range of temperatures. The product is offered withcommercial temperature range (0 to +70 °C) and industrial temperature range (-40to +85 °C).