EVERSPIN代理商MR2A08AMYS35R并口MRAM

英尚微电子总代理NETSOL存储器sram|everspin存储器MRAM|jsc济州半导体|ISSI芯成|CYPRESS赛普拉斯ISSI存储芯片，SRAM,DRAM,各类存储器memory芯片ic,*代理，库存现货。

I*ODUCTION

The MR2A08A is a 4,194,304-bitmagnetoresistive random acces*emory (MRAM) device organized as 524,288 wo*of 8 bits. The MR2A08A offers SRAM compatible 35ns read/write timing withunlimited endurance. Data is always non-volatile for greater than 20 years.Data is automatically protected on power loss by low-voltage inhibit circuitryto prevent writes with voltage out of specification.

The MR2A08A is the ideal memory solutionfor applicati* that must permanently store and retrieve critical data andprograms quickly.

The MR2A08A is *ailable in a *allfootprint 400-mil, 44-lead plastic *all-outline TSOP type 2 package or an 8 mmx 8 mm, 48-pin ball grid array (BGA) package with 0.75 mm ball centers. Thesepackages are compatible with similar low-power SRAM products and othernon-volatile RAM products.

The MR2A08A provides highly reliable datastorage over a wide range of temperatures. The product is offered withcommercial temperature range (0 to +70 °C), industrial temperature range (-40to +85 °C), and AEC-Q100 Grade 1 temperature range (-40 to +125 °C) opti*.