MRAM芯片MR2A16AMYS35集成电路芯片

I*ODUCTION

The MR2A16A is a 4,194,304-bit magnetoresistiverandom acces*emory (MRAM) device orga- nized as 262,144 wo* of 16 bits. TheMR2A16A offers SRAM compatible 35 ns read/write timing with unlimitedendurance. Data is always non-volatile for greater than 20 years. Data isautomati- cally protected on power loss by low-voltage inhibit circuitry toprevent writes with voltage out of specification.

The MR2A16A is the ideal memory solutionfor applicati* that must permanently store and re- trieve critical data andprograms quickly.

The M2A16A is *ailable in a *allfootprint 48-pin ball grid array (BGA) package and a 44-pin thin *all outlinepackage (TSOP Type 2). These packages are compatible with similar low-powerSRAM products and other nonvolatile RAM products.

The MR2A16A provides highly reliable datastorage over a wide range of temperatures. The prod- uct is offered withCommercial (0 to +70 °C), Industrial (-40 to +85 °C), Extended (-40 to +105°C), and AEC-Q100 Grade 1 (-40 to +125 °C) operating temperature range opti*.