everspin原厂现货MR4A08BMA35R串口存储芯片

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I*ODUCTION

The MR4A08B is a 16,777,216-bitmagnetoresistive random acces*emory (MRAM) device organized as 2,097,152wo* of 8 bits.

The MR4A08B offers SRAM compatible 35nsread/write timing with unlimited endurance. Data is always non-volatile forgreater than 20-years. Data is automatically protected on power loss bylow-voltage inhibit circuitry to prevent writes with voltage out ofspecification. The MR4A08B is the ideal memory solution for applicati* thatmust permanently store and retrieve critical data and programs quickly.

The MR4A08B is *ailable in *all footprint400-mil, 44-lead plastic *all-outline TSOP type-II package or 10 mm x 10 mm,48-pin ball grid array (BGA) package with 0.75 mm ball centers. These packagesare com- patible with similar low-power SRAM products and other non-volatileRAM products.

TheMR4A08B provides highly reliable data storage over a wide range oftemperatures. The product is of-fered with commercial (0 to +70 °C) andindustrial (-40 to +85 °C) operating temperature range opti*.